THz modulation performance of VO₂ film grown on Al₂O₃/Si substrate

Ying Xiong ¹, Qi-Ye Wen ^1*, Zhi Chen ², Qing-Hui Yang ¹, Huai-wu Zhang ^1
1 State Key Laboratory of Electronic Films and Integrated Devices,
University of Electronic Science and Technology of China, Chengdu, 610054, China
² National Key Laboratory of Science and Technology of Communication.
University of Electronic Science and Technology of China, Chengdu, 610054, China
^*1 Email: qywen@uestc.edu.cn

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Abstract: High quality VO₂ thin film was successfully deposited on Si substrate with Al₂O₃ as a buffer layer. The electrical and optical performance of the film was great enhanced. Reflective terahertz modulation is characterized and the modulation amplitude of 55% is obtained. The VO₂-on-Si buffered by Al₂O₃ can be widely used for THz devices.

Keywords: VO₂ thin film, Terhertz, Modulation.

Received: 2014-5-31

Published: 2014-9-30

Acknowledgments: Supported by National Nature Science Foundation of China (No. 61131005), Keygrant Project of Chinese Ministry of Education (No. 313013), the “New Century Excellent Talent Foundation” (No. NCET-11-0068), Sichuan Youth S & T foundation (No. 2011JQ0001), Specialized Research Fund for the Doctoral Program of Higher Education (No. 20110185130002).

Cite this article:
Ying Xiong, Qi-Ye Wen, Zhi Chen, Qing-Hui Yang, Huai-wu Zhang. THz modulation performance of VO₂ film grown on Al₂O₃/Si substrate[J]. International Journal of Terahertz Science and Technology, 2014, Vol.7, No.3: 150-153.  DOI:10.11906/TST.150-153.2014.09.13

URL: http://www.tstnetwork.org/10.11906/TST.150-153.2014.09.13