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Hua Qin 1*, Yao Yu 1, 2, Xiang Li 1, 2, Jiandong Sun 1, and Yongdan Huang 1
1 Key Laboratory of Nanodevices and Applications,
Suzhou Institute of Nano-tech and Nano-bionics (SINANO), Chinese Academy of Sciences,
398 Ruoshui Road, Suzhou 215123, P. R. China
2 Graduate University of Chinese Academy of Sciences, Beijing 100049, P. R. China
*1 Email: hqin2007@sinano.ac.cn
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Abstract: High-speed electronics is marching towards terahertz frequency regime in which electronics and optoelectronics are merging into a new realm. Efficient solid-state terahertz emitters/oscillators and high-speed high-sensitivity detectors are the most important active devices for terahertz applications. In the frequencies ranging from 1 THz to 3 THz, both electronic and photonic devices become less efficient. As coherent collective charge oscillations in the terahertz frequency range, plasmon in two-dimensional electron gas (2DEG) has long been pursued for active solid-state terahertz devices, especially emitters. However, such emitters are not yet practical since the conversion efficiency is yet lower than 10-3. In this review, we present excitation and probing of localized plasmon modes in grating-coupled and antenna-coupled field-effect transistors based on AlGaN/GaN heterostructures. It is shown that the damping of plasmons remains the critical problem in developing practical terahertz plasmon emitters. Nevertheless, non-resonant excitation of terahertz plasmons in antenna-coupled 2DEG is enabling a technology for high sensitivity detection of terahertz electromagnetic wave at room temperature.
Keywords: Plasmon, Two-dimensional electron gas, Terahertz detector, Terahertz emitter, Terahertz modulator
Received: 2016-6-23
Published: 2016-6-30
Cite this article:
Hua Qin, Yao Yu, Xiang Li, Jiandong Sun, and Yongdan Huang. Excitation of terahertz plasmon in two-dimensional electron gas[J]. International Journal of Terahertz Science and Technology, 2016, Vol.9, No.2: 71-81. DOI:10.11906/TST.071-081.2016.06.07
URL: http://www.tstnetwork.org/10.11906/TST.071-081.2016.06.07
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