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Kai Yang, Sara Arezoomandan, and Berardi Sensale-Rodriguez *
The University of Utah, Department of Electrical and Computer Engineering,
50 S. Central Campus Dr., Salt Lake City, UT 84112, USA
* Email: berardi.sensale@utah.edu
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Abstract: Graphene has recently been the subject of much attraction for THz applications due to its extraordinary material properties arising from its particular band structure. This paper reviews and discusses the linear and nonlinear properties of graphene at microwave/THz frequencies, and it also compares these properties with those of other semiconducting materials. By taking into account the effect of electron momentum relaxation time on intra-band optical transitions, which is significant at microwave and terahertz frequencies, we derive an analytical form for the third order microwave/THz susceptibility in graphene which is found to be >103 times larger than that of other typical nonlinear materials. Finally, current and future applications of such properties in THz devices are discussed, in particular, and we discuss a novel application of graphene into active THz filters.
Keywords: Graphene, Nonlinearities, Charge transport properties, Active devices, Filters.
Received: 2013-12-9
Published: 2013-12-30
Acknowledgments: The authors acknowledge the support from the NSF MRSEC program at the University of Utah under grant # DMR 1121252.
Cite this article:
Kai Yang, Sara Arezoomandan, and Berardi Sensale-Rodriguez.(Invited paper) The linear and non-linear THz properties of graphene[J]. International Journal of Terahertz Science and Technology, 2013, Vol.6, No.4: 223-233. DOI:10.11906/TST.223-233.2013.12.16
URL: http://www.tstnetwork.org/10.11906/TST.223-233.2013.12.16
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