International Journal of Terahertz Science and Technology
  TST >> Vol.1, No.3, September 2008: PP. 136-160
 

Intense Terahertz Excitation of Semiconductors

S.D. Ganichev
Terahertz Center, University of Regensburg, 93040, Regensburg, Germany

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Abstract: The potential of the terahertz spectroscopy at high excitation level is demonstrated on the example of the recently observed new class of spin dependent elects: spin photocurrents. Two electsresponsible for the occurrence of an electric current caused by homogeneous excitation with terahertz radiation and linked to a uniform spin polarization in a QW are reviewed: the circular photogalvanic elect and the spin-galvanic elect. PACS numbers: 73.21.Fg, 72.25.Fe, 78.67.De, 73.63.Hs

Keywords: Terahertz，THz spectroscopy.

Published: 2008-09-27

Acknowledgments: Financial support by the DFG is gratefully acknowledged.

Cite this article:
S.D. Ganichev. Intense Terahertz Excitation of Semiconductors[J]. International Journal of Terahertz Science and Technology, 2008, Vol.1, No.3: 136-160.  DOI:10.11906/TST.136-160.2008.09.13

URL: http://www.tstnetwork.org/10.11906/TST.136-160.2008.09.13

 
 
 

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