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Yue Hao, Lin-An Yang * and Jin-Cheng Zhang
Key Lab of Wide Band Gap Semiconductor Materials and Devices,
Xidian University, Xi'an, 710071, China
* Email: layang@xidian.edu.cn
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Abstract: The advantages of the properties of GaN over traditional III-V materials are discussed for applications in terahertz (THz) regime. Consequently the GaN-based devices which include electronics and photonics devices are investigated with emphases on the theoretical and practical developments of Quantum Cascade Lasers, Plasma Wave FETs and Negative Differential Resistance diodes. The results demonstrate that GaN is a promising material for THz semiconductor devices with an excellent performance in operating temperature, frequency and output power. It is found that the dislocations in GaN crystal seriously impact on the performance of THz devices. It is also shown that a great progress of MOCVD technique gives the potential in GaN epitaxial growth for THz applications. Finally, our recent jobs in GaN fabrication are revealed to demonstrate the further researches in THz regime
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Keywords: Terahertz, GaN, Quantum cascade laser, Plasma wave, Negative differential resistance
Published: 2008-06-26
Acknowledgments: This work is supported by NSFC under grant No. 60676048 and grant No. 60736033.
Cite this article:
Yue Hao, Lin-An Yang and Jin-Cheng Zhang. GaN-based Semiconductor Devices for Terahertz Technology[J]. International Journal of Terahertz Science and Technology, 2008, Vol.1, No.2: 51-64. DOI:10.11906/TST.051-064.2008.06.07
URL: http://www.tstnetwork.org/10.11906/TST.051-064.2008.06.07
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