Mm/sub-mm Bolometer Based on Electron Heating in Narrow-gap Semiconductor

V. Dobrovolsky, F. Sizov ^*, V. Zabudsky, N. Momot
Institute of Semiconductor Physics of the Ukrainian National Academy of Sciences,
Kiev-03028, Nauki Av., 41,
Tel: +380-44-5256296, Fax: +380-44-5251810,
^* Email: sizov@isp.kiev.ua.

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Abstract: Direct detection mm/sub-mm wave warm-carrier bipolar narrow-gap Hg_1-xCd_xTe semiconductor bolometers that can be used as picture elements in THz sensitive arrays, are considered. The response of Hg_1-xCd_xTe warm-electron bolometers was measured in ν=0.037-1.54 THz frequency range at T=68-300 K. Bipolar semiconductor warm-electron bolometer theoretical model was developed too. In the bolometer considered the electromagnetic wave propagates in semiconductor waveguide, heats electrons and holes there, creates their excess concentrations, as well as, the electromotive forces. These effects cause the bolometer response voltage. Experimental results confirm the model main conclusions. Because of response time defined by carrier recombination time in HgCdTe layers (τ~10^-8-10^-6 s) and the noise equivalent power that can reach NEP_{300 K} ~ 4×10^-10 W/Hz^1/2 in mm-wave region, the arrays on the base of HgCdTe bolometers can make them promising option for active fast frame rate sensitive applications.

Keywords: Mm/sub-mm radiation, Warm-carrier effect, Narrow-gap semiconductor bolometer.

Published: 2010-3-30

Acknowledgments: This work was supported by the National Science Foundation (through Grant No. OISE-0530220), the Department of Energy (through Grant No. DEFG02-06ER46308), and the Robert A. Welch Foundation (through Grant No. C-1509).

Cite this article:
V. Dobrovolsky, F. Sizov, V. Zabudsky, N. Momot. Mm/sub-mm Bolometer Based on Electron Heating in Narrow-gap Semiconductor[J]. International Journal of Terahertz Science and Technology, 2010, Vol.3, No.1: 33-54.  DOI:10.11906/TST.033-054.2010.03.04

URL: http://www.tstnetwork.org/10.11906/TST.033-054.2010.03.04