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Aritra Acharyya 1*, Moumita Mukherjee 2 and J P Banerjee 3
1,3 Institute of Radio Physics and Electronics, University of Calcutta, 92, APC Road, Kolkata 700009, India.
2 Centre of Millimeter wave Semiconductor Devices and Systems, Institute of Radio Physics and Electronics, University of Calcutta, 1, Girish Vidyaratna Lane, Kolkata 700009, India.
*1 E-mail: ari_besu@yahoo.co.in
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Abstract: The effect of tunneling current on the high frequency properties of double drift (p+pnn+) IMPATT devices based on silicon designed to operate at 0.3 THz has been investigated by using a modified double iterative simulation technique. Drift-diffusion model and realistic sharp doping profile of MBE grown junction are used for DC and high frequency analysis of DDR IMPATTs operating in mixed tunneling avalanche transit time (MITATT) mode. The actual rise of junction temperature is estimated through heat flow analysis and considered in the present paper. The DC and high frequency properties of the device in both IMPATT and MITATT modes (with tunneling current) operating in THz regime are studied and compared. The results show that the THz performance of the device as regards power delivery and conversion efficiency deteriorates when tunneling is incorporated in the analysis. This modeling will be helpful to realize Si MITATT source for Terahertz communication systems.
Keywords: Terahertz-source, Silicon, IMPATT and MITATT modes, Tunnel Current.
Received: 2010-12-6
Accepted: 2011-2-25
Published: 2011-3-31
Cite this article:
Aritra Acharyya, Moumita Mukherjee and J P Banerjee.Influence of Tunnel current on DC and Dynamic Properties of Si based Terahertz IMPATT source[J]. International Journal of Terahertz Science and Technology, 2011, Vol.4, No.1: 26-41. DOI:10.11906/TST.026-041.2011.03.04
URL: http://www.tstnetwork.org/10.11906/TST.026-041.2011.03.04
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