|
Tero Kiuru *
VTT Technical Research Centre of Finland, Communication systems
P.O Box 1000, FI-02044 VTT, Finland
* Email: tero.kiuru@vtt.fi
 View Full Text: PDF
Abstract: Efficient characterization and modelling techniques have a key role in the development of Schottky diode-based devices with state-of-the-art performance. This paper makes an effort to introduce such techniques and to provide examples of how they are used by the Schottky community. The modelling techniques covered in the paper are circuit simulator and electro-magnetic modelling. Characterization methods include current-voltage, capacitance-voltage, S-parameter, test jig-based, and thermal measurement techniques.
Keywords: Schottky diode, Modelling, Characterization, S-parameters, I-V measurements, C-V measurements, Thermal characterization
Received: 2015-8-18
Published: 2016-3-30
Acknowledgments: Mr. Subash Khanal, Ms. Krista Dahlberg, and Dr. Juha Mallat from the Aalto University, Department of Radio Science and Engineering, are acknowledged for several useful discussions and comments..
Cite this article:
Tero Kiuru. Schottky diode characterization, modelling and design for THz front-ends[J]. International Journal of Terahertz Science and Technology, 2016, Vol.9, No.1: 10-18. DOI:10.11906/TST.010-018.2016.03.02
URL: http://www.tstnetwork.org/10.11906/TST.010-018.2016.03.02
|
