International Journal of Terahertz Science and Technology
  TST >> Vol.2, No.1, March 2009: PP. 1-14
 

Radiation-induced magnetoresistance oscillations in high-mobility two-dimensional semiconductors

X. L. Lei
Department of Physics, Shanghai Jiaotong University,
1954 Huashan Road, Shanghai 200030, China

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Abstract: We give a brief overview to a systematic theoretical treatment on radiation induced magnetoresistance oscillations in high-mobility two-dimensional electron systems, based on the balance-equation approach to magnetotransport which is developed for high-carrier-density systems. The model covers regimes of both inter- and intra-Landau level processes, takes full account of multiphoton-assisted electron transitions as well as radiation-induced change of the electron distribution, and naturally includes electrodynamic damping. Electron scatterings by impurities, transverse and longitudinal acoustic phonons as well as polar optic phonons are considered in GaAs-based heterosystems with realistic scattering potentials. This theoretical model reproduces the main features of magnetoresistance oscillations, predicts the appearance of the measured zero resistance, and explains the rapid temperature decay of the oscillatory photoresistance as observed in many prominent experiments.

Keywords: Magnetoresistance oscillation, two-dimensional semiconductor, THz radiation

Published: 2009-03-31

Acknowledgments: This work was supported by the project of the National Science Foundation of China (No. 60876064), the National Basic Research Program of China (No. 2007CB310402) and the Shanghai Municipal Commission of Science and Technology (No. 06dj14008).

Cite this article:
X. L. Lei. Radiation-induced magnetoresistance oscillations in high-mobility two-dimensional semiconductors[J]. International Journal of Terahertz Science and Technology, 2009, Vol.2, No.1: 1-14.  DOI:10.11906/TST.001-014.2009.03.01

URL: http://www.tstnetwork.org/10.11906/TST.001-014.2009.03.01

 

 
 

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