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                  International Journal of Terahertz Science and Technology
Announcing a Special Issue of J.TST  solely devoted to Invite-d Papers on ¡°Microfabricated THz Vacuum Electron Devices¡±
date£º2011-05-23 11:23:59 Click No.£º3382

Announcing a Special Issue of the International Journal Terahertz Science and Technology (TST) solely devoted to Invited Papers on ¡°Microfabricated THz Vacuum Electron Devices¡± (Scheduled for December 2011)

Guest Editor

N. C. Luhmann, Jr. (ncluhmann@ucdavis.edu)

The invited manuscript submission deadline is September 15, 2011. Authors should submit their completed manuscripts to the International Journal Terahertz Science and Technology (TST)electronic submission and review website (tst@tstnetwork.org). Authors may seek additional information from the website (http://www.tstnetwork.org/authors.asp) or by contacting the Guest Editor.

The Special Issue is motivated by the fact that while the THz region (100 GHz ¨C 1 THz) of the electromagnetic spectrum has attracted increased attention in the last few years for a variety of unique applications including all-weather navigational aids, millimeter wave imaging, and advanced communication systems with high Shannon capacity and data conveyance rate, the success of these applications depends critically on the availability of practical coherent sources which are currently not available. This need has motivated extensive investigations into extending vacuum electron device technology into this regime resulting in a number of novel VED approaches. However, terahertz vacuum electronic circuits require submillimeter features of a few microns to a few hundred microns, which pose significant challenges for conventional machining techniques due to tool size and fabrication tolerance requirements. Recently, the MEMS techniques of lithography, etching, and deposition developed by the semiconductor chip industry have been applied to microfabrication and integration of vacuum electronic devices. In addition, the use of multiple beam and sheet beam approaches together with new cathode technologies have made possible a new generation of vacuum electron devices and the intention of this Special Issue is to broadly disseminate the results.

 
 

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