International Journal of Terahertz Science and Technology
  TST >> Vol.3, No.3, September 2010: PP. 109-116
 

Superlattice Electronic Devices as Submillimeter-Wave Sources

Heribert Eisele *, Suraj P. Khanna, and Edmund H. Linfield
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering
University of Leeds, Leeds LS2 9JT, United Kingdom
* Email: h.eisele@leeds.ac.uk

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Abstract: Negative differential resistance devices were fabricated from four epitaxial wafers with different GaAs/AlAs superlattices and evaluated in resonant-cap full-height WR-15 and WR-10 waveguide cavities. These devices on integral heat sinks generated output powers in the fundamental mode between 62–108 GHz. The best RF powers (and their corresponding dc-to-RF conversion efficiencies) were 58 mW (3.5%) at 66 GHz, 42 mW (2.6%) at 78 GHz, and 28 mW (1.8%) at 94 GHz. The RF power of 15 mW at 101 GHz constitutes a 30-fold improvement over previous results; the highest fundamental oscillation frequency was 108 GHz. In a second-harmonic mode, one device yielded 2.0 mW at 216 GHz, the highest second-harmonic frequency to date for a GaAs/AlAs superlattice.

Keywords: Harmonic operation, Millimeter-wave oscillator, Negative differential resistance device, Spectral purity, Superlattice.

Received: 2010-7-3

Accepted: 2010-9-27

Published: 2010-9-29

Acknowledgments: The devices were fabricated in the Michigan Nanofabrication Facility. The authors thank George I. Haddad, University of Michigan, for providing access to these cleanroom facilities. This work was supported in part by the US Army, the UK Electro Magnetic Remote Sensing Defence Technology Centre, and the UK Engineering and Physical Science Research Council.

Cite this article:
Heribert Eisele, Suraj P. Khanna, and Edmund H. Linfield. Superlattice Electronic Devices as Submillimeter-Wave Sources[J]. International Journal of Terahertz Science and Technology, 2010, Vol.3, No.3: 109-116.  DOI:10.11906/TST.109-116.2010.09.11

URL: http://www.tstnetwork.org/10.11906/TST.109-116.2010.09.11

 

 
 

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