International Journal of Terahertz Science and Technology
  TST >> Vol.6, No.3, September 2013: PP. 177-182
 

Evaluating graded doping profiles of single domain GaN gunn diodes for THz applications

Smita Francis *, and Robert van Zyl
Cape Peninsula University of Technology, French South African Institute of Technology, Department of Electrical Engineering, Symphony Way, Bellville, 7535, South Africa.
* Email: sfrancis@polytechnic.edu.na

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Abstract: The microwave performance of a single domain GaN Gunn diode is investigated using the Monte Carlo particle simulation technique. The simulations show that the performance of the diode is enhanced by appropriate engineering of the transit region doping profile. Three doping profiles are considered, namely flat, exponentially increasing and exponentially decreasing towards the anode. Improved microwave performance is obtained with the increasing doping profile, yielding 728 mW at a fundamental frequency of 0.175 THz, and 36 mW at the third harmonic of 0.525 THz. The simulations suggest this to be approaching the operational frequency limit of the device. Thermal effects are incorporated consistently with charge evolution through the device.

Keywords: Gunn diode, Negative differential resistance, Monte Carlo Simulation, Graded transit region.

Received: 2013-3-2

Published: 2013-9-30

Cite this article:
Smita Francis, and Robert van Zyl. Evaluating graded doping profiles of single domain GaN gunn diodes for THz applications[J]. International Journal of Terahertz Science and Technology, 2013, Vol.6, No.3: 177-182.  DOI:10.11906/TST.177-182.2013.09.11

URL: http://www.tstnetwork.org/10.11906/TST.177-182.2013.09.11

 

 
 

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