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XiaoFei Zang, YiMing Zhu *, and Songlin Zhuang
Shanghai Key Lab of Modern Optical System, Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, 516, Jungong Rd. Yangpu Dist. Shanghai, China, 200093
* Email: ymzhu@usst.edu.cn
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Abstract: Wideband absorption with high efficiency has attracted much attention due to the potential applications in imaging, anti-radar cloaking devices, sensors, detectors, and so on. Recently, meta-based periodical resonance structure (metamaterials) is proposed to realize perfect absorber. However, it suffers from the absorption of terahertz (THz) waves just in the single-frequency or narrow band width owing to its resonance features. Here, in this review, we discuss various THz broadband absorbers by fabricating gratings on heavily boron-doped silicon substrate. By optimizing the grating structure, the absorption bandwidths are 1 THz, 1.5 THz, and 2.0 THz, respectively with absorbance above 95%.
Keywords: Terahertz absorber, First-order diffraction, Second-order diffraction, Air-gap mode.
Received: 2015-8-18
Published: 2015-12-31
Cite this article:
XiaoFei Zang, YiMing Zhu , and Songlin Zhuang. Doped silicon-based broadband terahertz absorber: a review[J]. International Journal of Terahertz Science and Technology, 2015, Vol.8, No.4: 129-144. DOI:10.11906/TST.129-144.2015.12.13
URL: http://www.tstnetwork.org/10.11906/TST.129-144.2015.12.13
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