V. Grimalsky *, S. Koshevaya, A. Zamudio-Lara, J. Escobedo-Alatorre
Autonomous University of State Morelos (UAEM), Cuernavaca, ZP 62209, Mor., Mexico
* E-mail: firstname.lastname@example.org
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Abstract: Terahertz Simulations of the interaction of terahertz (THz) waves with the silicon integrated p-i-n-structures in the isolated silicon dielectric waveguides have been done. The modulation of the fundamental almost linearly polarized electromagnetic mode is considered. This modulation is essential in the case of highly doped p++, n++ regions, which provide the double injection of electrons and holes into i-region. The generalized boundary conditions at the injecting electrodes have been applied in the case of highly doped p++, n++ regions. The silicon dielectric waveguides possess the low losses in the regime without the injection. The investigations of the modulation properties of the integrated p-i-n-structures in the dielectric waveguides of THz range have demonstrated a possibility to use these structures up to the frequencies £8 THz. The transmission and the modulation of picoseconds electromagnetic monopulses have been demonstrated too.
Keywords: Terahertz modulator, Silicon dielectric waveguide, Integrated p-i-n-structure.
Acknowledgments: This work was partially supported by SEP-CONACyT (Mexico).
Cite this article:
V. Grimalsky, S. Koshevaya, A. Zamudio-Lara, J. Terahertz Modulators Based on Silicon P-I-N-Structures in Dielectric Waveguides[J]. International Journal of Terahertz Science and Technology, 2011, Vol.4, No.2: 59-70. DOI:10.11906/TST.059-070.2011.06.08